Method of patterning two-dimensional material layer on substrate, and method of fabricating semiconductor device
US11961898B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2021 |
| Grant date | Apr 16, 2024 |
| Priority date | — |
| Expiry date | Jun 14, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of patterning a 2D material layer is includes selectively forming a first material layer on a surface of a substrate to form a first region in which the first material layer covers the surface of the substrate and to further form a second region in which the surface of the substrate is exposed from the first material layer, the first material layer having a strong adhesive force with a 2D material. The method further includes forming a 2D material layer is formed in both the first region and the second region. The method further includes selectively removing the 2D material layer from the second region based on using a physical removal method, such that the 2D material layer remains in the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.