Metal-silicide-nitridation for stress reduction
US11971654B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2023 |
| Grant date | Apr 30, 2024 |
| Priority date | — |
| Expiry date | Jun 9, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/62
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.