Memory devices and methods of forming the same
US11978510B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2021 |
| Grant date | May 7, 2024 |
| Priority date | — |
| Expiry date | Apr 28, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure generally relates to memory devices and methods of forming the same. More particularly, the present disclosure relates to resistive random-access (ReRAM) memory devices incorporating reference cells for achieving high sensing yield. The present disclosure provides a memory device including a main cell structure including a switching element arranged between a pair of conductors, and a reference cell structure electrically coupled to the main cell structure. The reference cell structure includes a switching element arranged between a pair of conductors, in which the switching element of the reference cell structure has a dimension that is different from a dimension of the switching element of the main cell structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.