Dynamic sensing levels for nonvolatile memory devices
US11978528B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2022 |
| Grant date | May 7, 2024 |
| Priority date | — |
| Expiry date | Jan 28, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems, methods, and devices dynamically determine sensing levels for memory devices. Devices include nonvolatile memory cells included in a plurality of memory sectors, a plurality of static reference cells configured to represent a first reference value for distinguishing between memory states, and a plurality of dynamic reference cells configured to represent the first reference value after a designated amount of memory sector activity. Devices also include a comparator configured to be coupled to at least one memory cell of the plurality of memory cells and to at least two of the plurality of static reference cells and the plurality of dynamic reference cells, and further configured to determine a memory state of the at least one memory cell based, at least in part, on a second reference value determined by a combination of at least two of the plurality of static reference cells and the plurality of dynamic reference cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.