Patent · US Active

Plasma processing apparatus

US11984300B2 · kind B2 · utility

0Cited by
5References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 19, 2020
Grant dateMay 14, 2024
Priority date
Expiry dateAug 25, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/334
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A plasma processing apparatus includes a chamber; a wall member; an insulating member; and a ground member. The wall member is partially placed in an internal space of the chamber and exposed to a space at an outside of the chamber. The insulating member is provided on the wall member. The ground member is made of silicon, provided in the internal space and mounted on the insulating member. The wall member is configured to support the ground member in a non-contact state with the insulating member therebetween. The ground member is in contact with a spherical surface of the insulating member and mounted on the spherical surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.