Optoelectronic device
US11984549B2 · kind B2 · utility
0Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2019 |
| Grant date | May 14, 2024 |
| Priority date | — |
| Expiry date | Dec 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An optoelectronic device including an integrated circuit including light-emitting diodes, thin film transistors, and a stack of electrically-insulating layers, said stack being located between the light-emitting diodes and the transistors, said stack further including conductive elements, between and through said insulating layers, said conductive elements connecting at least some of the transistors to the light-emitting diodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.