Methods and apparatus for deposition of low-k films

US11990332B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Bhaskar Jyoti Bhuyan · San Jose, US
• Mark Saly · Santa Clara, US
• Zhelin Sun · Santa Clara, US
• Ning Li · White Plains, US
• Mihaela Balseanu · Sunnyvale, US
• Li-Qun Xia · Santa Clara, US
• Yijun Liu · Longbeilingcun, CN
• Lin Yang · Hubei, CN

Key dates

• Filing date: Aug 6, 2018
• Grant date: May 21, 2024
• Expiry date: May 25, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods and apparatus for forming a conformal SiCON film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a low temperature steam annealing process to form a film resistant to damage by rapid thermal processing or ashing. The film is treated by rapid thermal processing and then subjected to a high temperature anneal to form a film with a low dielectric constant.