Three-dimensional memory device including aluminum alloy word lines and method of making the same
US11990413B2 · kind B2 · utility
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Key dates
| Filing date | Aug 11, 2021 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | Jun 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers. The electrically conductive layers include an intermetallic alloy of aluminum and at least one metal other than aluminum. Memory openings vertically extend through the alternating stack. Memory opening fill structures are located in a respective one of the memory openings and include a respective vertical semiconductor channel and a respective vertical stack of memory elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.