Patent · US Active

Semiconductor device with compartment shield formed from metal bars and manufacturing method thereof

US11990421B2 · kind B2 · utility

1Cited by
3References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 19, 2022
Grant dateMay 21, 2024
Priority date
Expiry dateAug 15, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2221/68368
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device has a substrate and first and second electrical component disposed over the substrate. A first metal bar is disposed over the substrate between the first electrical component and second electrical component. The first metal bar is formed by disposing a mask over a carrier. An opening is formed in the mask and a metal layer is sputtered over the mask. The mask is removed to leave the metal layer within the opening as the first metal bar. The first metal bar can be stored in a tape-and-reel.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.