Semiconductor device and method for fabricating the same
US11990547B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Sep 27, 2020 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | Oct 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming recesses adjacent to two sides of the gate structure, forming a buffer layer in the recesses, forming a first linear bulk layer on the buffer layer, forming a second linear bulk layer on the first linear bulk layer, forming a bulk layer on the second linear bulk layer, and forming a cap layer on the bulk layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.