In-situ lithography pattern enhancement with localized stress treatment tuning using heat zones
US11994807B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2023 |
| Grant date | May 28, 2024 |
| Priority date | — |
| Expiry date | Feb 21, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/7034
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Aspects of the present disclosure provide a wafer processing device for optimizing wafer shape. For example, the wafer processing device can include a first hot plate, a second hot plate and a controller. The first hot plate can be configured to heat a wafer. For example, the first hot plate can provide uniform heating across a surface of the first hot plate. The second hot plate has multiple heating zones with each heating zone independently controllable such that each heating zone can be set to a temperature value independent of other heating zones. The controller is configured to control the first hot plate to provide the uniform heating, receive a bow measurement from wafer curvature measurement of a wafer, and set the multiple heating zones of the second hot plate to their respective temperature values that correspond to the bow measurement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.