Methods of seasoning process chambers
US11996273B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2020 |
| Grant date | May 28, 2024 |
| Priority date | — |
| Expiry date | Dec 13, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32522
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure relate to semiconductor processing. More specifically, embodiments of the present disclosure relate to methods for seasoning one or more components of a process chamber. In at least one embodiment, a method for seasoning a process chamber includes depositing a seasoning film onto a component of the process chamber at a chamber pressure of about 4 mTorr to about 20 mTorr and a temperature below about 200° C. or about 200° C. to about 400° C. The method includes depositing a deposition film onto the seasoning film. In at least one embodiment, a method includes introducing a nitrogen-containing gas to the seasoning film to form a nitrogen-treated seasoning film. Introducing the nitrogen-containing gas to the seasoning film is performed before depositing the deposition film onto the seasoning film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.