Cryogenic atomic layer etch with noble gases
US11996294B2 · kind B2 · utility
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24References
20Claims
0Family size
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Key dates
| Filing date | Nov 9, 2022 |
| Grant date | May 28, 2024 |
| Priority date | — |
| Expiry date | Nov 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure generally relates to substrate processing methods, such as etching methods with noble gases at low temperatures. In an aspect, the method includes exposing a substrate, a first layer comprising a gas, and a fluorine-containing layer to energy to form a passivation layer while maintaining the substrate at conditions encompassing a triple point temperature of the gas, the substrate positioned in a processing region of a processing chamber. The method further includes etching the substrate with ions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.