P-type dipole for P-FET

US11996455B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Yongjing Lin · San Jose, US
• Karla M Bernal Ramos · San Jose, US
• Shih Chung Chen · Hsinchu, TW
• Yixiong Yang · San Jose, US
• Lin Dong · Sunnyvale, US
• Steven C. H. Hung · Sunnyvale, US
• Srinivas Gandikota · Santa Clara, US

Key dates

• Filing date: Apr 3, 2023
• Grant date: May 28, 2024
• Expiry date: Apr 3, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).