Transistor device having a source region segments and body region segments
US11996477B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2023 |
| Grant date | May 28, 2024 |
| Priority date | — |
| Expiry date | Mar 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/141
Abstract
In one general aspect, an apparatus can include a first trench disposed in a semiconductor region and including a gate electrode and a second trench disposed in the semiconductor region. The apparatus can include a mesa region disposed between the first trench and the second trench. The apparatus can include a source region segment of a first conductivity type disposed in a first side of the mesa region where the source region segment is included in a plurality of source region segments and where the plurality of source region segments are aligned along the longitudinal axis. The apparatus can include a body region segment of a second conductivity type disposed in a second side of the mesa region opposite the first side of the mesa region and having a portion disposed above the source region segment where the body region segment is included in a plurality of body region segments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.