Forming multiple aerial images in a single lithography exposure pass
US12001144B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2022 |
| Grant date | Jun 4, 2024 |
| Priority date | — |
| Expiry date | Oct 26, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70575
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A set of the pulses of light in a light beam is passed through a mask toward a wafer during a single exposure pass; at least a first aerial image and a second aerial image on the wafer based on pulses of light in the set of pulses that pass through the mask is generated during a single exposure pass, the first aerial image is at a first plane on the wafer and the second aerial image is at a second plane on the wafer, the first plane and the second plane being spatially distinct from each other and separated from each other by a separation distance along the direction of propagation; and a three-dimensional semiconductor component is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.