Willard E. Conley
28Patents
9h-index
63Co-inventors
78Inventor score
Filing activity: Sep 4, 1987 → Oct 26, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4939070A | Thermally stable photoresists with high sensitivity | Emerging Cross-Sectional Technologies | 74 | Expired |
| US5296332A | Crosslinkable aqueous developable photoresist compositions and method for use thereof | Physics | 35 | Expired |
| US5322765A | Dry developable photoresist compositions and method for use thereof | Physics | 31 | Expired |
| US4931379A | High sensitivity resists having autodecomposition temperatures greater than about 160.degree. C. | Physics | 24 | Expired |
| US5240812A | Top coat for acid catalyzed resists | Physics | 20 | Expired |
| US5023164A | Highly sensitive dry developable deep UV photoresist | Physics | 18 | Expired |
| US6300035A | Chemically amplified positive photoresists | Emerging Cross-Sectional Technologies | 15 | Expired |
| US6207353A | Resist formulation which minimizes blistering during etching | Electricity | 14 | Expired |
| US9989866B2 | Wafer-based light source parameter control | Physics | 12 | Active |
| US5663036A | Microlithographic structure with an underlayer film comprising a thermolyzed azide | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5783361A | Microlithographic structure with an underlayer film containing a thermolyzed azide compound | Emerging Cross-Sectional Technologies | 7 | Expired |
| US9835959B1 | Controlling for wafer stage vibration | Physics | 4 | Active |
| US5795701A | Making of microlithographic structures with an underlayer film containing a thermolyzed azide compound | Emerging Cross-Sectional Technologies | 4 | Expired |
| US5567569A | Process for producing a positive pattern utilizing naphtho quinone diazide compound having non-metallic atom directly bonded to the naphthalene ring | Emerging Cross-Sectional Technologies | 4 | Expired |
| US7883829B2 | Lithography for pitch reduction | Electricity | 3 | Active |
| US9997888B2 | Control of a spectral feature of a pulsed light beam | Electricity | 3 | Active |
| US10416566B2 | Optimization of source and bandwidth for new and existing patterning devices | Physics | 3 | Active |
| US7741221B2 | Method of forming a semiconductor device having dummy features | Emerging Cross-Sectional Technologies | 3 | Active |
| US4828964A | Polyimide formulation for forming a patterned film on a substrate | Physics | 3 | Expired |
| US9229051B2 | Integrated circuit with degradation monitoring | Physics | 3 | Active |
| US5552256A | Positive resist composition containing naphthoquinonediazide compound having non-metallic atom directly bonded to the naphthalene ring | Emerging Cross-Sectional Technologies | 1 | Expired |
| US12001144B2 | Forming multiple aerial images in a single lithography exposure pass | Physics | 0 | Active |
| US11526082B2 | Forming multiple aerial images in a single lithography exposure pass | Physics | 0 | Active |
| US8119334B2 | Method of making a semiconductor device using negative photoresist | Physics | 0 | Active |
| US8507187B2 | Multi-exposure lithography employing a single anti-reflective coating layer | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.