Precision multi-axis photolithography alignment correction using stressor film
US12001147B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2022 |
| Grant date | Jun 4, 2024 |
| Priority date | — |
| Expiry date | Aug 16, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70783
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Aspects of the present disclosure provide a method for improving overlay alignment of patterning by correcting wafer shape. For example, the method can include receiving a wafer having a working surface with at least partially-fabricated semiconductor devices, and a backside surface opposite to the working surface. The method can also include forming a first stressor film on the backside surface. The first stressor film can modify overlay alignment of the working surface in a first direction across the working surface of the wafer. The method can also include forming one or more first semiconductor structures on the working surface of the wafer. The first semiconductor structures are aligned in the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.