Apparatus for generating etchants for remote plasma processes
US12002659B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2022 |
| Grant date | Jun 4, 2024 |
| Priority date | — |
| Expiry date | Dec 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32568
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A remote plasma source (RPS) for generating etchants leverages symmetrical hallow cathode cavities to increase etchant rates. The RPS includes an upper electrode with a first hollow cavity configured to induce a hollow cathode effect within the first hollow cavity, a lower electrode with a second hollow cavity configured to induce a hollow cathode effect within the second hollow cavity, wherein the first hollow cavity and the second hollow cavity are symmetrical, a first gap positioned between and electrically separating the upper electrode and the lower electrode, and an annular dielectric cover in direct contact with the lower electrode in the first gap and forms a second gap between an uppermost surface of the annular dielectric cover and a lowermost surface of the upper electrode. The annular dielectric cover fills approximately 50% to approximately 95% of a height of the first gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.