Gapfill structure and manufacturing methods thereof
US12002719B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2022 |
| Grant date | Jun 4, 2024 |
| Priority date | — |
| Expiry date | Dec 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes patterning a trench and depositing a first insulating material along sidewalls and a bottom surface of the trench using a conformal deposition process. Depositing the first insulating material includes forming a first seam between a first portion of the first insulating material on a first sidewall of the trench and a second portion of the first insulating material on a second sidewall of the trench. The method further includes etching the first insulating material below a top of the trench and depositing a second insulating material over the first insulating material and in the trench using a conformal deposition process. Depositing the second insulating material comprises forming a second seam between a first portion of the second insulating material on the first sidewall of the trench and a second portion of the second insulating material on a second sidewall of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.