Semiconductor device
US12002858B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 3, 2021 |
| Grant date | Jun 4, 2024 |
| Priority date | — |
| Expiry date | May 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A semiconductor device has a first and a second nitride semiconductor layer and a first and a second electrode thereon. A gate electrode is between the first and second electrodes. A gate field plate is on the gate electrode. A first field plate is above a position between the gate field plate and the second electrode. A second field plate is between the first field plate and the gate field plate. A distance from the first nitride semiconductor layer to the second field plate is shorter than a distance from the first nitride semiconductor layer to the portion of the gate field plate that protrudes the most towards the second electrode. The distance from the first nitride semiconductor layer to the second field plate is shorter than a distance from the first nitride semiconductor layer to an end surface of the first field plate on a first electrode side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.