Method of copper hillock detecting
US12007435B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Dec 8, 2020 |
| Grant date | Jun 11, 2024 |
| Priority date | — |
| Expiry date | Jan 22, 2043 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49004
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of copper hillock detecting includes the following steps. A testkey structure is disposed on a substrate, wherein the testkey structure includes a lower metallization layer, an upper metallization layer, and a dielectric layer between the lower metallization layer and the upper metallization layer. A force voltage difference is applied to the lower metallization layer and the upper metallization layer under a test temperature and stress time. A changed sensing voltage difference to the lower metallization layer and the upper metallization layer is detected for detecting copper hillock.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.