Transition metal dichalcogenide based spin orbit torque memory device
US12009018B2 · kind B2 · utility
1Cited by
2References
19Claims
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Key dates
| Filing date | Jun 13, 2022 |
| Grant date | Jun 11, 2024 |
| Priority date | — |
| Expiry date | Jun 13, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An apparatus is provided which comprises: a stack comprising a magnetic insulating material (MI such as EuS, EuO, YIG, TmIG, or GaMnAs) and a transition metal dichalcogenide (TMD such as MoS2, MoSe2, WS2, WSe2, PtS2, PtSe2, WTe2, MoTe2, or graphene), wherein the magnetic insulating material has a first magnetization; a magnet with a second magnetization, wherein the magnet is adjacent to the TMD of the stack; and an interconnect comprising a spin orbit material, wherein the interconnect is adjacent to the magnet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.