Detection using semiconductor detector
US12009177B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 9, 2021 |
| Grant date | Jun 11, 2024 |
| Priority date | — |
| Expiry date | Nov 25, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/933
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method includes applying a first voltage to a source of a first transistor of a detector unit of a semiconductor detector in a test wafer and applying a second voltage to a gate of the first transistor and a drain of a second transistor of the detector unit. The first transistor is coupled to the second transistor in series, and the first voltage is higher than the second voltage. A pre-exposure reading operation is performed to the detector unit. Light of an exposure apparatus is illuminated to a gate of the second transistor after applying the first and second voltages. A post-exposure reading operation is performed to the detector unit. Data of the pre-exposure reading operation is compared with the post-exposure reading operation. An intensity of the light is adjusted based on the compared data of the pre-exposure reading operation and the post-exposure reading operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.