Semiconductor device and method for fabricating the same
US12009409B2 · kind B2 · utility
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2References
4Claims
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Key dates
| Filing date | Mar 6, 2023 |
| Grant date | Jun 11, 2024 |
| Priority date | — |
| Expiry date | Mar 6, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.