Method of screening non-volatile memory cells
US12014793B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2022 |
| Grant date | Jun 18, 2024 |
| Priority date | — |
| Expiry date | Jan 30, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5006
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for screening memory cells includes erasing the memory cells, weakly programming the memory cells to a modified erased state, performing a first read operation on the memory cells after the erasing and the weakly programming, screening any of the memory cells that exhibit a read current during the first read operation below a margin read current threshold M1, baking the memory cells after the first read operation, performing a second read operation on the memory cells after the baking, and screening any of the memory cells that exhibit a read current during the second read operation below the margin read current threshold M1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.