Structure and material engineering methods for optoelectronic devices signal to noise ratio enhancement

US12015042B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Papo CHEN · San Jose, US
• Schubert S. Chu · San Francisco, US
• Errol Antonio C. Sanchez · Tracy, US
• John Boland · Scotts Valley, US
• Zhiyuan Ye · San Jose, US
• Lori D. Washington · Union City, US
• Xianzhi Tao · Palo Alto, US
• Yi-Chiau Huang · Fremont, US
• Chen-Ying WU · Santa Clara, US

Key dates

• Filing date: Feb 21, 2020
• Grant date: Jun 18, 2024
• Expiry date: Apr 11, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F71/139

Abstract

A method of fabricating a semiconductor device includes forming an interconnect structure over a front side of a sensor substrate, thinning the sensor substrate from a back side of the sensor substrate, etching trenches into the sensor substrate, pre-cleaning an exposed surface of the sensor substrate, epitaxially growing a charge layer directly on the pre-cleaned exposed surface of the sensor substrate, and forming isolation structures within the etched trenches.