Integrated assemblies and methods of forming integrated assemblies

US12015080B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Yoshitaka Nakamura · Tokyo, JP
• Yi Fang Lee · Boise, US
• Jerome A. Imonigie · Boise, US
• Scott E. Sills · Boise, US
• Aaron Michael Lowe · Boise, US

Key dates

• Filing date: Aug 20, 2020
• Grant date: Jun 18, 2024
• Expiry date: May 25, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/315

Abstract

Some embodiments include an integrated assembly having an access device between a storage element and a conductive structure. The access device has channel material which includes semiconductor material. The channel material has a first end and an opposing second end, and has a side extending from the first end to the second end. The first end is adjacent the conductive structure, and the second end is adjacent the storage element. Conductive gate material is adjacent the side of the channel material. A first domed metal-containing cap is over the conductive structure and under the channel material and/or a second domed metal-containing cap is over the channel material and under the storage element. Some embodiments include methods of forming integrated assemblies.