Film thickness measurement method, film thickness measurement device, and film formation system
US12018928B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2022 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | Aug 12, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/213
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
There is provided a film thickness measurement method which measures a film thickness of a specific film to be measured in a multilayer film in situ in a film formation system that forms the multilayer film on a substrate, the method comprising: regarding a plurality of films located under the film to be measured as one underlayer film, measuring a film thickness of the underlayer film, and deriving an optical constant of the underlayer film by spectroscopic interferometry; and after the film to be measured is formed, deriving a film thickness of the film to be measured by spectroscopic interferometry using the film thickness and the optical constant of the underlayer film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.