Carbon implantation for thicker gate silicide
US12020937B2 · kind B2 · utility
0Cited by
6References
7Claims
0Family size
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Key dates
| Filing date | Mar 23, 2022 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | Jul 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28097
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor structures include a channel region, a gate dielectric on the channel region, source and drain structures on opposite sides of the channel region, and a gate conductor between the source and drain structures on the gate dielectric. The source and drain structures include source and drain silicides. The gate conductor includes a gate conductor silicide. The gate conductor silicide is thicker than the source and drain silicides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.