Semiconductor device
US12021050B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2022 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | Sep 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/94
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including: a first formation site and a second formation site for forming a first conductive bump and a second conductive bump; when a first environmental density corresponding to the first formation site is greater than a second environmental density corresponding to the second formation site, a cross sectional area of the second formation site is greater than a cross sectional area of the first formation site; wherein the first environmental density is determined by a number of formation sites around the first formation site in a predetermined range and the second environmental density is determined by a number of formation sites around the second formation site in the predetermined range; wherein a first area having the first environmental density forms an ellipse layout while a second area having the second environmental density forms a strip layout surrounding the ellipse layout.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.