Patent · US Active

Hybrid metrology method and system

US12025560B2 · kind B2 · utility

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24Claims
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Inventors

Key dates

Filing dateOct 19, 2021
Grant dateJul 2, 2024
Priority date
Expiry dateOct 8, 2042

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01B2210/56
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A method and system are presented for use in measuring characteristic(s) of patterned structures. The method utilizes processing of first and second measured data, wherein the first measured data is indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of illuminating and/or collected light conditions corresponding to the characteristic(s) to be measured, and the second measured data comprises at least one spectrum obtained from the patterned structure in Optical Critical Dimension (OCD) measurement session. The processing comprises applying model-based analysis to the at least one Raman spectrum and the at least one OCD spectrum, and determining the characteristic(s) of the patterned structure under measurements.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.