Location dependent sense time offset parameter for improvement to the threshold voltage distribution margin in non-volatile memory structures
US12027218B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2021 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | May 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for performing a program verify operation with respect to a target memory cell in a memory structure of a non-volatile memory system is provided. The method may include the step of determining a location of the target memory cell within the structure and, based upon the determined location of the target cell and with respect to each programmable memory state: (1) applying a first sense signal at a first point in time, and (2) applying a second sense signal at a second point in time. A time interval between the first and the second points in time is equal to a predetermined optimal time period plus or minus an offset parameter time value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.