Methods of forming electronic devices comprising silicon carbide materials
US12027363B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2022 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | May 4, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/231
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.