Patent · US Active

Preheat processes for millisecond anneal system

US12027427B2 · kind B2 · utility

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10Claims
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Key dates

Filing dateJul 23, 2020
Grant dateJul 2, 2024
Priority date
Expiry dateJul 23, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/68757
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Preheat processes for a millisecond anneal system are provided. In one example implementation, a preheat process can include receiving a substrate on a wafer support plate in a processing chamber of a millisecond anneal system; obtaining one or more temperature measurements of the wafer support plate using a temperature sensor; and applying a preheat recipe to heat the wafer support plate based at least in part on the temperature of the wafer support plate. In one example implementation, a preheat process can include obtaining one or more temperature measurements from a temperature sensor having a field of view of a wafer support plate in a millisecond anneal system; and applying a pulsed preheat recipe to heat the wafer support plate in the millisecond anneal system based at least in part on the one or more temperature measurements.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.