Patent · US Active

Optoelectronic device comprising light-emitting diodes with improved light extraction

US12027505B2 · kind B2 · utility

0Cited by
0References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 18, 2019
Grant dateJul 2, 2024
Priority date
Expiry dateMar 18, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/0362
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An optoelectronic device including a support including a face; light-emitting diodes lying on the face and comprising including semiconductor elements in the form of wires, cones or truncated cones; for each light-emitting diode, an encapsulation block at least partially transparent to the radiation emitted by the light-emitting diodes and covering the light-emitting diode, the maximum thickness of the encapsulation block being comprised between 1 μm and 30 μm, interstices of air being present between the encapsulation blocks covering adjacent diodes; and an electrically conductive layer covering the encapsulation blocks, wherein the refractive index of the encapsulation block covering at least one of the light-emitting diodes is comprised between 1.3 and 1.6.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.