Field effect transistor including channel formed of 2D material
US12027588B2 · kind B2 · utility
0Cited by
8References
18Claims
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Key dates
| Filing date | Nov 17, 2022 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | Nov 17, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/258
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A field effect transistor includes a substrate, a source electrode and a drain electrode on the substrate and apart from each other in a first direction, a plurality of channel layers, a gate insulating film surrounding each of the plurality of channel layers, and a gate electrode surrounding the gate insulating film. Each of the plurality of channel layers has ends contacting the source electrode and the drain electrode. The plurality of channel layers are spaced apart from each other in a second direction away from the substrate. The plurality of channel layers include a 2D semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.