Semiconductor device
US12027614B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 9, 2021 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | Aug 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device of an embodiment includes: a semiconductor layer including an element region and an element isolation region; a first insulation film provided on the semiconductor layer; a first electrode provided on the first insulation film and extending in a first direction; a second electrode provided on the semiconductor layer, arranged in a second direction intersecting with the first direction, and extending in the first direction; a third electrode provided on the semiconductor layer, arranged in the second direction, and extending in the first direction; second insulation films provided between the first insulation film and the semiconductor layer, and interposing the third electrode in the second direction; a first field plate electrode provided on the first electrode and connected to the first electrode; a second field plate electrode provided on the first field plate electrode and connected to the second electrode; and a third field plate electrode provided on the third electrode and connected to the third electrode. The second insulation films extend from the element isolation region to a part of the element region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.