Metrology method and associated metrology and lithographic apparatuses
US12032299B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2020 |
| Grant date | Jul 9, 2024 |
| Priority date | — |
| Expiry date | Feb 13, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/7092
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.