Processes for depositing sib films

US12033848B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Aykut Aydin · Sunnyvale, US
• Rui Cheng · San Jose, US
• Karthik Janakiraman · San Jose, US
• Abhijit Basu Mallick · Palo Alto, US
• Takehito Koshizawa · San Jose, US
• Bo Qi · San Jose, US

Key dates

• Filing date: Jun 18, 2021
• Grant date: Jul 9, 2024
• Expiry date: Jul 11, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0337
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of the present disclosure generally relate to processes for forming silicon- and boron-containing films for use in, e.g., spacer-defined patterning applications. In an embodiment, a spacer-defined patterning process is provided. The process includes disposing a substrate in a processing volume of a processing chamber, the substrate having patterned features formed thereon, and flowing a first process gas into the processing volume, the first process gas comprising a silicon-containing species, the silicon-containing species having a higher molecular weight than SiH4. The process further includes flowing a second process gas into the processing volume, the second process gas comprising a boron-containing species, and depositing, under deposition conditions, a conformal film on the patterned features, the conformal film comprising silicon and boron.