Methods for forming low resistivity tungsten features
US12037682B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2022 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Jul 25, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a structure of a substrate is provided including a tungsten-containing layer including a nucleation layer and a fill layer. The method includes disposing a nucleation layer along sidewalls of the opening, wherein nucleation layer includes boron and tungsten. Disposing the fill layer over the nucleation layer within the opening, wherein a tungsten-containing layer includes a resistivity of about 16 μΩ·cm or less, wherein a tungsten-containing layer has a thickness of about 200 Å to about 600 Å, and wherein a tungsten-containing layer thickness is half a width of the tungsten-containing layer disposed within the opening between opposing sidewall portions of the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.