Kai Wu
34Patents
7h-index
88Co-inventors
68Inventor score
Filing activity: May 15, 2008 → Oct 28, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8900999B1 | Low temperature high pressure high H2/WF6 ratio W process for 3D NAND application | Electricity | 399 | Active |
| US7964505B2 | Atomic layer deposition of tungsten materials | Electricity | 150 | Active |
| US7732327B2 | Vapor deposition of tungsten materials | Electricity | 48 | Active |
| US8071478B2 | Method of depositing tungsten film with reduced resistivity and improved surface morphology | Electricity | 36 | Active |
| US9528183B2 | Cobalt removal for chamber clean or pre-clean process | Performing Operations; Transporting | 24 | Active |
| US8865594B2 | Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance | Electricity | 9 | Active |
| US9169556B2 | Tungsten growth modulation by controlling surface composition | Chemistry; Metallurgy | 8 | Active |
| US8617985B2 | High temperature tungsten metallization process | Electricity | 6 | Active |
| US9748105B2 | Tungsten deposition with tungsten hexafluoride (WF6) etchback | Electricity | 5 | Active |
| US9653352B2 | Methods for forming metal organic tungsten for middle of the line (MOL) applications | Electricity | 4 | Active |
| US10256144B2 | Process integration approach of selective tungsten via fill | Electricity | 4 | Active |
| US8835311B2 | High temperature tungsten metallization process | Electricity | 3 | Active |
| US8920564B2 | Methods and apparatus for thermal based substrate processing with variable temperature capability | Chemistry; Metallurgy | 2 | Active |
| US8513116B2 | Atomic layer deposition of tungsten materials | Electricity | 2 | Active |
| US10395916B2 | In-situ pre-clean for selectivity improvement for selective deposition | Electricity | 2 | Active |
| US8211799B2 | Atomic layer deposition of tungsten materials | Electricity | 1 | Active |
| US9051655B2 | Boron ionization for aluminum oxide etch enhancement | Electricity | 1 | Active |
| US9947578B2 | Methods for forming low-resistance contacts through integrated process flow systems | Electricity | 1 | Active |
| US10727119B2 | Process integration approach of selective tungsten via fill | Electricity | 1 | Active |
| US9783889B2 | Apparatus for variable substrate temperature control | Chemistry; Metallurgy | 1 | Active |
| US12159804B2 | Tungsten molybdenum structures | Electricity | 0 | Active |
| US12191198B2 | Low resistivity tungsten film and method of manufacture | Electricity | 0 | Active |
| US12113020B2 | Formation of metal vias on metal lines | Electricity | 0 | Active |
| US11380536B2 | Multi-step pre-clean for selective metal gap fill | Electricity | 0 | Active |
| US11776806B2 | Multi-step pre-clean for selective metal gap fill | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.