Magnetic memory device
US12040036B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2023 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Jul 31, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure describes a magnetic memory device. The magnetic memory device includes a magnetic sensing array configured to sense an external magnetic field strength. The magnetic memory device further includes a voltage modulator configured to, in response to the external magnetic field strength being greater than a threshold magnetic field strength, provide a test voltage different from a current write voltage of the magnetic memory device. The magnetic memory device further includes an error check array configured to use the test voltage as a write voltage of the error check array and provide a bit error rate corresponding to the test voltage. The magnetic memory device further includes a control unit configured to adjust, based on the bit error rate being equal to or less than a threshold bit error rate, a write voltage of the magnetic memory device from the current write voltage to the test voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.