Modulated atomic layer deposition

US12040181B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Chan Myae Myae Soe · Tualatin, US
• Chloe Baldasseroni · Tigard, US
• Shiva Sharan Bhandari · Soudan, US
• Pulkit Agarwal · Beaverton, US
• Adrien LaVoie · Newberg, US
• Bart J. van Schravendijk · Sunnyvale, US

Key dates

• Filing date: Jul 3, 2019
• Grant date: Jul 16, 2024
• Expiry date: Dec 17, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31111
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods and apparatuses for depositing thin films using long and short conversion times during alternating cycles of atomic layer deposition (ALD) are provided herein. Embodiments involve alternating conversion duration of an ALD cycle in one or more cycles of a multi-cycle ALD process. Some embodiments involve modulation of dose, purge, pressure, plasma power or plasma energy in two or more ALD cycles.