Plasma doping of gap fill materials
US12040182B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2022 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Oct 21, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/84
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a variety of processes for forming electronic devices that use spin-on dielectric materials, properties of the spin-on dielectric materials can be enhanced by curing these materials using plasma doping. For example, hardness and Young's modulus can be increased for the cured material. Other properties may be enhanced. The plasma doping to cure the spin-on dielectric materials uses a mechanism that is a combination of plasma ion implant and high energy radiation associated with the species ionized. In addition, physical properties of the spin-on dielectric materials can be modified along a length of the spin-on dielectric materials by selection of an implant energy and dopant dose for the particular dopant used, corresponding to a selection variation with respect to length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.