Semiconductor device and method for fabricating the same
US12040234B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Aug 3, 2021 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Mar 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes the steps of forming a metal gate on a substrate, a spacer around the metal gate, and a first interlayer dielectric (ILD) layer around the spacer, performing a plasma treatment process to transform the spacer into a first bottom portion and a first top portion, performing a cleaning process to remove the first top portion, and forming a second ILD layer on the metal gate and the first ILD layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.