Microelectronic devices including differently sized conductive contact structures, and related memory devices, electronic systems, and methods
US12040274B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2021 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Jan 28, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronic device comprises a stack structure comprising insulative structures vertically interleaved with conductive structures, first support pillar structures vertically extending through the stack structure in a first staircase region including steps defined at edges of tiers of the insulative structures and conductive structures, and second support pillar structures vertically extending through the stack structure in a second staircase region including additional steps defined at edges of additional tiers of the insulative structures and conductive structures, the second support pillar structures having a smaller cross-sectional area than the first support pillar structures. Related memory devices, electronic systems, and methods are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.