High electron mobility transistor and method for fabricating the same
US12040392B2 · kind B2 · utility
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2References
12Claims
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Key dates
| Filing date | Dec 6, 2022 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Feb 15, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a patterned mask on the buffer layer; using the patterned mask to remove the buffer layer for forming ridges and a damaged layer on the ridges; removing the damaged layer; forming a barrier layer on the ridges; and forming a p-type semiconductor layer on the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.