Substrate processing method and substrate processing apparatus
US12042813B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2020 |
| Grant date | Jul 23, 2024 |
| Priority date | — |
| Expiry date | May 12, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B3/0047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing method includes a liquid film forming step of forming a liquid film, a liquid film heat retaining step of keeping the liquid film warm, a gas phase layer forming step of forming a gas phase layer which holds the processing liquid on a center portion of the liquid film, an opening forming step of forming an opening in the center portion of the liquid film by excluding the processing liquid held by the gas phase layer, a substrate rotating step of rotating the substrate around a rotation axis, and an opening expanding step of expanding the opening, while a state in which the gas phase layer is formed on an inner circumferential edge of the liquid film is maintained, by moving the irradiation region toward a circumferential edge portion of the substrate while the liquid film heat retaining step and the substrate rotating step are performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.