Wafer surface defect inspection method and apparatus thereof
US12044631B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2022 |
| Grant date | Jul 23, 2024 |
| Priority date | — |
| Expiry date | Feb 6, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/8887
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A wafer surface defect inspection method and a wafer surface defect inspection apparatus are provided. The method includes the following steps. Scanning information of a wafer is received, and the scanning information includes multiple scanning parameters. At least one reference point of the scanning information is determined, and path information is generated according to the at least one reference point and a reference value. Multiple first scanning parameters corresponding to the path information in the scanning parameters are obtained according to the path information to generate a curve chart. According to the curve chart, it is determined whether the wafer has a defect, and a defect type of the defect is determined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.